[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Recess-Free Normally-off GaN MIS-HEMT Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

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