Effects of Tantalum Doping on Electrical Characteristics of...

IEEE Electron Device Letters 2019 / 9 Vol. 40; Iss. 9

Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors

Tsuji, Hiroshi, Takei, Tatsuya, Nakata, Mitsuru, Miyakawa, Masashi, Fujisaki, Yoshihide
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Volume:
40
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2930062
Date:
September, 2019
File:
PDF, 650 KB
english, 2019
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