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Investigation of Gate Sidewall Spacer Optimization From OFF-State Leakage Current Perspective in 3-nm Node Device
Ryu, Donghyun, Myeong, Ilho, Lee, Jang Kyu, Kang, Myounggon, Jeon, Jongwook, Shin, HyungcheolVolume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2912394
Date:
June, 2019
File:
PDF, 1.77 MB
english, 2019