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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Thin-Barrier InAlN/GaN MISHEMTs Using LPCVD Si 3 N 4 as Gate Dielectric
Zhou, Xingye, Wang, Yuangang, Tan, Xin, Gu, Guodong, Lv, Yuanjie, Feng, ZhihongYear:
2019
Language:
english
DOI:
10.1109/edssc.2019.8753956
File:
PDF, 164 KB
english, 2019