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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - E-beam fabricated Metal-Semiconductor-Metal (MSM) varactor based on AlGaN/GaN HEMT with rectangular gate of 450nm
Li, Qian, An, Ning, Zeng, Jian-Ping, Jiang, Jun, Li, LiYear:
2019
Language:
english
DOI:
10.1109/edssc.2019.8754410
File:
PDF, 130 KB
english, 2019