[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaO x as Gate Dielectric

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