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[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaO x as Gate Dielectric
Li, Sichao, Hu, Qianlan, Wang, Xin, Wang, Mengfei, Wu, YanqingYear:
2018
Language:
english
DOI:
10.1109/wipdaasia.2018.8734558
File:
PDF, 415 KB
english, 2018