Modelling of heterojunction bipolar transistors (HBTs)...

International Journal of RF and Microwave Computer-Aided Engineering 2000 Vol. 10; Iss. 1

Modelling of heterojunction bipolar transistors (HBTs) based on gallium arsenide (GaAs)

R. Schultheis, N. Bovolon, J.-E. Müller, P. Zwicknagl
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Volume:
10
Year:
2000
Language:
english
Pages:
10
DOI:
10.1002/(sici)1099-047x(200001)10:13.0.co;2-d
File:
PDF, 341 KB
english, 2000
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