Analysis of electrical, dielectric and thermal performance...

Materials Science in Semiconductor Processing 2019 / 12 Vol. 104

Analysis of electrical, dielectric and thermal performance of NiFe/SiO2/Si MOS device fabricated by liquid phase epitaxy

Ashery, Adel, Khabiri, Gomaa, Hassan, Abdelwahab, Yousef, Moataz M.K., Khalil, Ahmed S.G.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
104
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.104652
Date:
December, 2019
File:
PDF, 2.66 MB
english, 2019
Conversion to is in progress
Conversion to is failed