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[IEEE 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Xi'an, China (2019.6.12-2019.6.14)] 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - A GaN-based RB-MISHEMT with Schottky-MIS hybrid Drain and TUG-AlGaN Barrier Layer
Liu, Xiyuan, Shi, Yijun, Wanjun, Chen, Wu, Shan, Liu, Chao, Chen, Tangsheng, Zhang, BoYear:
2019
Language:
english
DOI:
10.1109/edssc.2019.8754445
File:
PDF, 272 KB
english, 2019