GO/C2S Gate Dielectric Material for Nanoscale Devices...

Surface Engineering and Applied Electrochemistry 2019 / 7 Vol. 55; Iss. 4

GO/C2S Gate Dielectric Material for Nanoscale Devices Obtained via Pechini Method

Hussein Salmani,, Ali Bahari,
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
55
Language:
english
Journal:
Surface Engineering and Applied Electrochemistry
DOI:
10.3103/S1068375519040136
Date:
July, 2019
File:
PDF, 1.11 MB
english, 2019
Conversion to is in progress
Conversion to is failed