The Oppositely Doped Islands IGBT Achieving Ultralow Turn...

IEEE Transactions on Electron Devices 2019 / 8 Vol. 66; Iss. 8

The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss

Chen, Weizhen, Cheng, Junji, Huang, Haimeng, Zhang, Bingke, Chen, Xing Bi
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Volume:
66
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2019.2924093
Date:
August, 2019
File:
PDF, 1.30 MB
english, 2019
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