Electric double layer gating of two-dimensional...

ACS Applied Materials & Interfaces 2019 / 09

Electric double layer gating of two-dimensional field-effect transistors using a single-ion conductor

Xu, Ke, Liang, Jierui, Woeppel, Aaron, Bostian, Micah Eli, Ding, Hangjun, Chao, Zhongmou, McKone, James R., Beckman, Eric J., Fullerton-Shirey, Susan K.
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.9b11526
Date:
September, 2019
File:
PDF, 10.36 MB
english, 2019
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