Modeling of Drain Induced Barrier Lowering Effect for...

Ferroelectrics 2019 / 07 Vol. 546; Iss. 1

Modeling of Drain Induced Barrier Lowering Effect for Bi-Material Buffer Gate 4H-SiC Metal Semiconductor Field Effect Transistor

Zhang, Xianjun, Wang, Mingjia, Qin, Qingliang, You, Na
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Volume:
546
Language:
english
Journal:
Ferroelectrics
DOI:
10.1080/00150193.2019.1592472
Date:
July, 2019
File:
PDF, 1.24 MB
english, 2019
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