[IEEE 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2019.4.22-2019.4.25)] 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Novel Vertically-Stacked Tensily-Strained Ge 0.85 Si 0.15 GAA n-Channels on a Si Channel with $\mathrm{SS}=76\mathrm{mV}/\mathrm{dec}, \mathrm{DIBL} =36\mathrm{mV}/\mathrm{V}$, and $\mathrm{I}_{\mathrm{on}}/\mathrm{I}_{\mathrm{off}}=1.2\mathrm{E}7$