A 600 V high voltage gate driver IC with excellent allowable negative VS bias capability for E-mode GaN power devices
Lu, Yangyang, Zhu, Jing, Hu, Kongsheng, Yu, Siyuan, Yan, Ding, Cheng, Chuanyi, Luo, Cui, Zhang, Yunwu, Sun, WeifengLanguage:
english
Journal:
Analog Integrated Circuits and Signal Processing
DOI:
10.1007/s10470-019-01537-4
Date:
September, 2019
File:
PDF, 2.17 MB
english, 2019