Improvement of the performance of ITO/a-SiOx/n-Si device by controllable sputtering power and reducible interface states
Wu, Kangjing, Gao, Ming, Du, Huiwei, Chen, Dongyun, Zhao, Lei, Ma, ZhongquanVolume:
105
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.104702
Date:
January, 2020
File:
PDF, 1.93 MB
english, 2020