A novel 4H-SiC MESFET with symmetrical lightly doped drain...

Materials Science in Semiconductor Processing 2020 / 01 Vol. 105

A novel 4H-SiC MESFET with symmetrical lightly doped drain for high voltage and high power applications

Jia, Hujun, Li, Tao, Tong, Yibo, Zhu, Shunwei, Liang, Yuan, Wang, Xingyu, Zeng, Tonghui, Yintang, Yang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
105
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.104707
Date:
January, 2020
File:
PDF, 4.05 MB
english, 2020
Conversion to is in progress
Conversion to is failed