[IEEE 2019 IEEE/MTT-S International Microwave Symposium -...

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[IEEE 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019 - Boston, MA, USA (2019.6.2-2019.6.7)] 2019 IEEE MTT-S International Microwave Symposium (IMS) - 185mW InP HBT Power Amplifier with 1 Octave Bandwidth (2550GHz), 38% peak PAE at 44GHz and Chip Area of 276 x 672 μm 2

Arias, Andrea, Rowell, Petra, Urteaga, Miguel, Griffith, Zach, Shinohara, Keisuke, Bergman, Josh, Carter, Andy, Pierson, Richard, Brar, Bobby, Buckwalter, James, Rodwell, Mark
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Year:
2019
Language:
english
DOI:
10.1109/MWSYM.2019.8701079
File:
PDF, 287 KB
english, 2019
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