Degradation in electrothermal characteristics of 4H-SiC...

Microelectronics Reliability 2019 / 11 Vol. 102

Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress

Tang, Yidan, Ge, Lan, Gu, Hang, Bai, Yun, Luo, Yafei, Li, Chengzhan, Liu, Xinyu
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Volume:
102
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2019.113451
Date:
November, 2019
File:
PDF, 2.35 MB
english, 2019
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