150 KeV proton irradiation effects on photoluminescence of...

Optical Materials 2019 / 11 Vol. 97

150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures

Lei, Q.Q., Aierken, A., Sailai, M., Heini, M., Shen, X.B., Zhao, X.F., Hao, R.T., Mo, J.H., Zhuang, Y., Guo, Q.
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Volume:
97
Language:
english
Journal:
Optical Materials
DOI:
10.1016/j.optmat.2019.109375
Date:
November, 2019
File:
PDF, 1.94 MB
english, 2019
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