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Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment
Borga, M., Meneghini, M., Benazzi, D., Canato, E., Püsche, R., Derluyn, J., Abid, I., Medjdoub, F., Meneghesso, G., Zanoni, E.Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2019.113461
Date:
September, 2019
File:
PDF, 660 KB
english, 2019