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Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon Nanowires
Ben Abdelaziz, B., Radaoui, M., Ben Fredj, A., Romdhane, S., Ben Alaya, C., Bouaïcha, M., Bouchriha, H.Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-019-07615-7
Date:
September, 2019
File:
PDF, 1.65 MB
2019