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The further investigation of N-doped β-Ga2O3 thin films with native defects for Schottky-barrier diode
Luan, Suzhen, Dong, Linpeng, Ma, Xiaofan, Jia, RenxuVolume:
812
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2019.152026
Date:
January, 2020
File:
PDF, 1.76 MB
2020