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[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Atomistic analysis of transport properties of InGaN/GaN multi-quantum well
O'Donovan, Michael, Luisier, Mathieu, O'Reilly, Eoin P., Schulz, StefanYear:
2019
DOI:
10.1109/NUSOD.2019.8806898
File:
PDF, 738 KB
2019