[IEEE 2019 International Conference on Numerical Simulation...

  • Main
  • [IEEE 2019 International Conference on...

[IEEE 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Ottawa, ON, Canada (2019.7.8-2019.7.12)] 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Atomistic analysis of transport properties of InGaN/GaN multi-quantum well

O'Donovan, Michael, Luisier, Mathieu, O'Reilly, Eoin P., Schulz, Stefan
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2019
DOI:
10.1109/NUSOD.2019.8806898
File:
PDF, 738 KB
2019
Conversion to is in progress
Conversion to is failed