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In situ monitoring of surface reactions during atomic layer etching of silicon nitride using hydrogen plasma and fluorine radicals
Nakane, Kazuya, Vervuurt, René H. J., Tsutsumi, Takayoshi, Kobayashi, Nobuyoshi, Hori, MasaruJournal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.9b11489
Date:
September, 2019
File:
PDF, 2.07 MB
2019