In-situ etch-depth control better than 5 nm with...

In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application

Doering, Christoph, Strassner, Johannes, Fouckhardt, Henning
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Volume:
9
Journal:
AIP Advances
DOI:
10.1063/1.5099526
Date:
July, 2019
File:
PDF, 5.49 MB
2019
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