Effects of Recess Depths on Performance of AlGaN/GaN Power...

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Solid-State Electronics 2019 / 9

Effects of Recess Depths on Performance of AlGaN/GaN Power MIS-HEMTs on the Si Substrates and Threshold Voltage Model of Different Recess Depths for the Using HfO2 Gate Insulator

Zhao, Yaopeng, Wang, Chong, Zheng, Xuefeng, Ma, Xiaohua, He, Yunlong, Liu, Kai, Li, Ang, Peng, Yue, Zhang, Chunfu, Hao, Yue
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Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.107649
Date:
September, 2019
File:
PDF, 3.46 MB
2019
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