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ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping
Canato, E., Meneghini, M., Nardo, A., Masin, F., Barbato, A., Barbato, M., Stockman, A., Banerjee, A., Moens, P., Zanoni, E., Meneghesso, G.Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2019.06.026
Date:
September, 2019
File:
PDF, 2.30 MB
english, 2019