Ultrahigh-temperature Oxidation of 4H-SiC (0001) and Gate...

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Ultrahigh-temperature Oxidation of 4H-SiC (0001) and Gate Oxide Reliability Dependence on Oxidation Temperature

Wan, Caiping, Xu, Hengyu, Jin, Zhi
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Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2019.125250
Date:
September, 2019
File:
PDF, 387 KB
english, 2019
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