Low residual stress in hydrogenated amorphous...

Journal of Materials Research and Technology 2019 / 9

Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

Herrera-Celis, José, Reyes-Betanzo, Claudia, Gelvez-Lizarazo, Oscar, Arriaga, L.G., Itzmoyotl-Toxqui, Adrián
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Language:
english
Journal:
Journal of Materials Research and Technology
DOI:
10.1016/j.jmrt.2019.09.026
Date:
September, 2019
File:
PDF, 1.95 MB
english, 2019
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