Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs...

Materials Science Forum 2019 / 7 Vol. 963

Improved Field Effect Mobility in Si-Face 4H-SiC MOSFETs with a Deposited SiNx Interface Layer

Kumazawa, Teruaki, Okamoto, Mitsuo, Iijima, Miwako, Iwahashi, Yohei, Fujikake, Shinji, Araoka, Tuyoshi, Tawara, Tae, Kimura, Hiroshi, Hamada, Kimimori, Harada, Shinsuke, Okumura, Hajime
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Volume:
963
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.963.469
Date:
July, 2019
File:
PDF, 2.06 MB
english, 2019
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