Effects of InAlN underlayer on deep traps detected in...

Journal of Applied Physics 2019 / 09 Vol. 126; Iss. 12

Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Polyakov, A. Y., Haller, C., Smirnov, N. B., Shiko, A. S., Shchemerov, I. V., Chernykh, S. V., Alexanyan, L. A., Lagov, P. B., Pavlov, Yu. S., Carlin, J.-F., Mosca, M., Butté, R., Grandjean, N., Peart
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Volume:
126
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5122314
Date:
September, 2019
File:
PDF, 2.79 MB
english, 2019
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