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Strain buildup in 4H-SiC implanted with noble gases at low dose
Jiang, C., Dagault, L., Audurier, V., Tromas, C., Declémy, A., Beaufort, M.F., Barbot, J.F.Volume:
5
Year:
2018
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2018.03.062
File:
PDF, 407 KB
english, 2018