Charge separation in epitaxial SnS/MoS2 vertical...

Charge separation in epitaxial SnS/MoS2 vertical heterojunctions grown by low-temperature pulsed MOCVD

Olding, Jack N., Henning, Alex, Dong, Jason Tianming, Zhou, Qunfei, Moody, Michael J., Smeets, Paul, Darancet, Pierre, Weiss, Emily A., Lauhon, Lincoln J.
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Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.9b14412
Date:
October, 2019
File:
PDF, 992 KB
english, 2019
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