![](/img/cover-not-exists.png)
[IEEE 2019 Silicon Nanoelectronics Workshop (SNW) - Kyoto, Japan (2019.6.9-2019.6.10)] 2019 Silicon Nanoelectronics Workshop (SNW) - Comparison of switching characteristics of HfO x RRAM device with different switching layer thicknesses
Lee, Dong Keun, Kim, Min-Hwi, Bang, Suhyun, Kim, Tae-Hyeon, Choi, Yeon-Joon, Kim, Sungjun, Cho, Seongjae, Park, Byung-GookYear:
2019
Language:
english
DOI:
10.23919/SNW.2019.8782952
File:
PDF, 136 KB
english, 2019