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Preparation and switching characterization of Ge 1 Sb 2 Te 4 thin film devices for NVRAM applications
Sangeetha, B.G., Joseph, C.M., Sangam, V.G., Suresh, K.Volume:
5
Year:
2018
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2017.12.332
File:
PDF, 503 KB
english, 2018