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The influence of image force effect on the accuracy of modeling of tunneling current for ultra thin high- k dielectric material Ta 2 O 5 based MOS devices
Maity, N.P., Maity, Reshmi, Baishya, S.Volume:
5
Year:
2018
Language:
english
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2018.04.065
File:
PDF, 831 KB
english, 2018