Grain Size Engineering of Ferroelectric Zr-doped HfO2 for...

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IEEE Electron Device Letters 2019

Grain Size Engineering of Ferroelectric Zr-doped HfO2 for the Highly Scaled Devices Applications

Liao, Jiajia, Zeng, Binjian, Sun, Qi, Chen, Qiang, Liao, Min, Qiu, Chenguang, Zhang, Zhiyong, Zhou, Yichun
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Year:
2019
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2019.2944491
File:
PDF, 1.73 MB
english, 2019
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