Formation mechanisms of etched feature profiles during Si...

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2019 / 09 Vol. 37; Iss. 5

Formation mechanisms of etched feature profiles during Si etching in Cl 2 /O 2 plasmas

Mori, Masahito, Osano, Yugo, Irie, Shoki, Eriguchi, Koji, Ono, Kouichi
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Volume:
37
Language:
english
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/1.5091673
Date:
September, 2019
File:
PDF, 4.57 MB
english, 2019
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