Charge trapping effect in HfO2-based high-k gate dielectric...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2019 / 11 Vol. 459

Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy

Li, Zongzhen, Liu, Tianqi, Bi, Jinshun, Yao, Huijun, Zhang, Zhenxing, Zhang, Shengxia, Liu, Jiande, Zhai, Pengfei, Liu, Jie
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Volume:
459
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2019.09.009
Date:
November, 2019
File:
PDF, 2.84 MB
english, 2019
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