Field-Effect Transistor Based on Zinc Oxide Using Diffusion...

Journal of Contemporary Physics (Armenian Academy of Sciences) 2019 / 7 Vol. 54; Iss. 3

Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology

Hovsepyan, R. K., Aghamalyan, N. R., Kafadaryan, Y. A., Arakelyan, A. A., Mnatsakanyan, H. G., Petrosyan, S. I.
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Volume:
54
Language:
english
Journal:
Journal of Contemporary Physics (Armenian Academy of Sciences)
DOI:
10.3103/S1068337219030095
Date:
July, 2019
File:
PDF, 538 KB
english, 2019
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