Radiation hardening efficiency of gate sizing and...

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Microelectronics Reliability 2019 / 9

Radiation hardening efficiency of gate sizing and transistor stacking based on standard cells

Aguiar, Y.Q., Wrobel, F., Guagliardo, S., Autran, J.-L., Leroux, P., Saigné, F., Touboul, A.D., Pouget, V.
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Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2019.113457
Date:
September, 2019
File:
PDF, 1.98 MB
english, 2019
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