Electronic surface, optical and electrical properties of p...

Materials Science in Semiconductor Processing 2020 / 02 Vol. 106

Electronic surface, optical and electrical properties of p – GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

Mahat, Mohamad Raqif, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Anuar, Mohd Afiq, Allif, Kamarul, Azman, Adreen, Nakajima, Hideki, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
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Volume:
106
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2019.104757
Date:
February, 2020
File:
PDF, 1.60 MB
2020
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