Improved electrical performance of MOCVD-grown GaN p-i-n...

Solid-State Electronics 2019 / 12 Vol. 162

Improved electrical performance of MOCVD-grown GaN p-i-n diodes with high-low junction p-layers

Howell-Clark, Jennifer, Guo, Zhibo, Wetzel, Christian, Chow, T. Paul, Guanxi, Piao, Yano, Yoshiki, Tabuchi, Toshiya, Matsumoto, Koh
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Volume:
162
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2019.107646
Date:
December, 2019
File:
PDF, 984 KB
2019
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