High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN...

Micromachines 2019 / 10 Vol. 10; Iss. 10

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

Abid, Idriss, Kabouche, Riad, Bougerol, Catherine, Pernot, Julien, Masante, Cedric, Comyn, Remi, Cordier, Yvon, Medjdoub, Farid
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Volume:
10
Language:
english
Journal:
Micromachines
DOI:
10.3390/mi10100690
Date:
October, 2019
File:
PDF, 7.04 MB
english, 2019
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