Investigation of dry-etch-induced defects in >600 V...

Journal of Applied Physics 2019 / 10 Vol. 126; Iss. 14

Investigation of dry-etch-induced defects in >600 V regrown, vertical, GaN, p-n diodes using deep-level optical spectroscopy

Pickrell, G. W., Armstrong, A. M., Allerman, A. A., Crawford, M. H., Glaser, C. E., Kempisty, J., Abate, V. M.
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Volume:
126
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5110521
Date:
October, 2019
File:
PDF, 1.71 MB
english, 2019
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