Growth of GaP 1 − x − y As y N x on Si substrates by chemical beam epitaxy
Ben Saddik, K., Braña, A. F., López, N., Walukiewicz, W., García, B. J.Volume:
126
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5111090
Date:
September, 2019
File:
PDF, 3.11 MB
english, 2019