Atomistic approach to simulate kink migration and kink-pair...

Physical Review B 2019 / 10 Vol. 100; Iss. 15

Atomistic approach to simulate kink migration and kink-pair formation in silicon: The kinetic activation-relaxation technique

Eliassen, Simen N. H., Friis, Jesper, Ringdalen, Inga G., Mousseau, Normand, Trochet, Mickaël, Li, Yanjun
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Volume:
100
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.100.155305
Date:
October, 2019
File:
PDF, 2.74 MB
english, 2019
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