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Investigation of spatial and energy profiles of plasma process-induced latent defects in Si substrate using capacitance–voltage characteristics
Hamano, Takashi, Urabe, Keiichiro, Eriguchi, KojiLanguage:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/1361-6463/ab3550
Date:
July, 2019
File:
PDF, 1.95 MB
english, 2019