Strain buildup in 4H-SiC implanted with noble gases at low...

Strain buildup in 4H-SiC implanted with noble gases at low dose

Jiang, C., Dagault, L., Audurier, V., Tromas, C., Declémy, A., Beaufort, M.F., Barbot, J.F.
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Volume:
5
Year:
2018
Journal:
Materials Today: Proceedings
DOI:
10.1016/j.matpr.2018.03.062
File:
PDF, 407 KB
2018
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